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| N-Channel Enhancement Mode Field Effect Transistor FEATURES 55V, 108.5A, RDS(ON) = 8.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP3205/CEB3205 D D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 55 Units V V A A W W/ C mJ A C 20 108.5 434 200 1.3 319 68 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA Limit 0.75 62.5 Units C/W C/W Details are subject to change without notice . 1 Rev 4. 2007.Sep. http://www.cetsemi.com CEP3205/CEB3205 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 62A VDS = 44V, ID = 62A, VGS = 10V VDD = 28V, ID = 62A, VGS = 10V, RGEN = 4.5 27 14 68 19 102.3 23.1 23.1 108.5 1.3 54 28 136 38 136 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 25V, ID = 62A VDS = 25V, VGS = 0V, f = 1.0 MHz 50 5040 1115 35 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250A VGS = 10V, ID = 62A 2 6.5 4 8.5 V m BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250A VDS = 55V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 55 25 100 -100 V A Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units nA nA Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 138H, IAS = 68A, VDD = 25V, RG = 25, Starting TJ = 25 C 2 CEP3205/CEB3205 180 150 120 90 60 30 0 VGS=10,9,8V 160 25 C ID, Drain Current (A) ID, Drain Current (A) 120 VGS=7V VGS=6V 80 40 TJ=125 C -55 C VGS=5V 0 0.5 1 1.5 2 2.5 3 0 0 2 4 6 8 10 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1800 1500 1200 900 600 300 0 Crss 0 5 10 15 20 25 Ciss Coss 2.6 2.2 1.8 1.4 1.0 0.6 0.2 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=62A VGS=10V RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V VTH, Normalized Gate-Source Threshold Voltage ID=250A 10 1 10 0 0 25 50 75 100 125 150 175 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEP3205/CEB3205 VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=44V ID=62A 10 3 RDS(ON)Limit 100ms ID, Drain Current (A) 10 2 1ms 10ms DC 10 1 0 20 40 60 80 10 0 TC=25 C TJ=175 C Single Pulse 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 10 -2 1. RcJC (t)=r (t) * RcJC 2. RcJC=See Datasheet 3. TJM-TC = P* RcJC (t) 4. Duty Cycle, D=t1/t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 |
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